Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max

文件：159.67 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL

文件：197.26 Kbytes 页数：7 Pages

RENESAS

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Silicon N Channel IGBT High Speed Power Switching

• Trench gate technology (G5H series)\n• Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ\n• High speed switching tf = 150 ns typ\n• Low leak current ICES = 1 μA max ;

Renesas

瑞萨

Silicon N Channel IGBT High Speed Power Switching

• Trench gate technology (G5H series)\n• Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ\n• High speed switching tf = 150 ns typ\n• Low leak current ICES = 1 μA max\n• Isolated package TO-220FL;

Renesas

瑞萨