RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent

文件：468.27 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind

文件：473.99 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent

文件：468.27 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind

文件：473.99 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

Mid-Band Low-Band NB-IoT TxM

文件：775.44 Kbytes 页数：25 Pages

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