RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 945MHZ PWRSO-10

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：388.45 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 页数：5 Pages

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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：388.45 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：388.45 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：388.45 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体