RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

文件：398.01 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：512.2 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：512.2 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit • Excellent thermal stability\n• Common source configuration• POUT = 6 W with 15dB gain @ 945 MHz / 28 V\n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 945MHZ PWRSO-10

STMICROELECTRONICS

意法半导体