RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode a

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STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is i • Excellent thermal stability\n• Common source configuration• POUT = 2 W with 15dB gain @ 960 MHz / 28 V\n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 960MHZ PWRSO10

STMICROELECTRONICS

意法半导体