PD57002-E数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.

特性 Features

• Excellent thermal stability
• Common source configuration
• POUT = 2 W with 15dB gain @ 960 MHz / 28 V
• New RF plastic package

简介

PD57002-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD57002-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。