PD55035STR1-E中文资料35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor数据手册ST规格书

描述 Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.

特性 Features

• Excellent thermal stability
• Common source configuration
• POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
• New RF plastic package