PD85025C

25W 13.6V 870MHz LDMOS in M243 ceramic package; Excellent thermal stability\nCommon source configuration\nPOUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V\nBeO free package\nESD protection\nIn compliance with the 2002/95/EC european directive\n;

The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications.\n

PD85025C

RF power transistor - LdmoST family

Description ThePD85025CisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD85025Cboaststheexcellen

PD85025C

Package：M243；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 945MHZ M243

PD85025-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD85025-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD85025-Eboaststheexcell

PD85025S-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD85025-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD85025-Eboaststheexcell

PD85025STR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD85025-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD85025-Eboaststheexcell

PD85025TR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD85025-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD85025-Eboaststheexcell

STAP85025

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=25Wwith15.7dBgain@870MHz/ 13.6V ■Plasticpackage ■ESDprotection ■Incompliancewiththe2002/95/ECEuropean directive Description TheSTAP85025isacommonsourceN-channel, enhancement-modela

STAP85025S

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs