35W 13.6V 870MHz LDMOS in M243 ceramic package

• In compliance with the 2002/95/EC european directive\n• Excellent thermal stability\n• POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V• Common source configuration\n• ESD protection\n• BeO-free ceramic package;

ST

意法半导体

RF power transistor - LdmoST family

Description The PD85035C is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellen

文件：242.62 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Package：M243；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 945MHZ M243

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

文件：376.64 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：384.36 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

文件：376.64 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体