RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

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STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：384.36 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 870MHZ

STMICROELECTRONICS

意法半导体