PD85025C数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications.

特性 Features

Excellent thermal stability
Common source configuration
POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V
BeO free package
ESD protection
In compliance with the 2002/95/EC european directive

简介

PD85025C属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD85025C晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。