PD84006L-E数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The PD84006L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.
PD84006L-E’s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.

特性 Features

• Excellent thermal stability
• Common source configuration
• Broadband performances:POUT = 6 W with 13 dB gain @ 870 MHz
• Plastic package
• ESD protection
• Supplied in tape and reel
• In compliance with the 2002/95/EC european directive

简介

PD84006L-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD84006L-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。