PD84006-E数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF ’s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

特性 Features

Excellent thermal stability
Common source configuration
Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz
Plastic package
ESD protection
In compliance with the 2002/95/EC European directive

简介

PD84006-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD84006-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。