RF Power LDMOS transistor

The PD84006L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.\n PD84006L-E’s superior gain and efficien • Excellent thermal stability\n• Common source configuration\n• Broadband performances:POUT = 6 W with 13 dB gain @ 870 MHz\n• Plastic package• ESD protection\n• Supplied in tape and reel\n• In compliance with the 2002/95/EC european directive;

ST

意法半导体

RF power transistor, LDmoST plastic family

Description The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and

文件：299.52 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Package：8-PowerVDFN；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 25V 870MHZ

STMICROELECTRONICS

意法半导体

Three-Phase Wave Motor Driver IC

文件：251.29 Kbytes 页数：21 Pages

TOSHIBA

东芝

Three-Phase Wave Motor Driver IC

文件：293.87 Kbytes 页数：22 Pages

TOSHIBA

东芝

Three-Phase Wave Motor Driver IC

文件：293.87 Kbytes 页数：22 Pages

TOSHIBA

东芝