Description

The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.

PD84006L-E’s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.

Features

■ Excellent thermal stability

■ Common source configuration

■ Broadband performances:

POUT = 6 W with 13 dB gain @ 870 MHz

■ Plastic package

■ ESD protection

■ Supplied in tape and reel

■ In compliance with the 2002/95/EC european

directive

PD84006L-E属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。意法半导体（ST）集团制造生产的PD84006L-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。