PD85015-E中文资料15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package数据手册ST规格书

描述 Description

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted on the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly.

特性 Features

• Excellent thermal stability
• Common source configuration
• POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V
• Plastic package
• ESD protection
• In compliance with the 2002/95/EC European directive

简介

PD85015-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD85015-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。