RF Power LDMOS transistor

The PD84010-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellent gain, linear • Excellent thermal stability\n• Common source configuration\n• POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC European directive;

ST

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 870MHZ

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体