RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

文件：560.6 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

18W 28V HF - 1GHz LDMOS晶体管，PSO-10RF塑料封装

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit • Excellent thermal stability \n• Common source configuration \n• POUT = 18 W with 16.5dB gain@945 MHz/28 V \n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 945MHZ PWRSO10

STMICROELECTRONICS

意法半导体