PD57060-E技术资料参数批发采购意法半导体-114ic电子网

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PD57060-E	文件：488.78 Kbytes Page：21 Pages	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060-E	文件：520.53 Kbytes Page：21 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060-E	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：PowerSO-10 裸露底部焊盘类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：FET RF 65V 945MHZ PWRSO10	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
57060	文件：248.31 Kbytes Page：1 Pages	MagnetsandActuators Description Littelfuseoffersawiderangeofmagneticactuatorsthatarepackagedinshapes similartotherelativematingsensors.Wealsoofferalimitedfamilyofbare magnetswithvariousgradesofmaterials,includingferrite(ceramic),AlNiCoand neodymiumironboron(NdFeB)materials.	LittelfuseLittelfuse Inc. 力特力特公司
IRHNA57060	文件：107.48 Kbytes Page：8 Pages	200V,N-CHANNEL	IRFInternational Rectifier 英飞凌英飞凌科技公司
PD57060	文件：305.82 Kbytes Page：12 Pages	RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY DESCRIPTION ThePD57060SisacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57060Sboaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060S	文件：305.82 Kbytes Page：12 Pages	RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY DESCRIPTION ThePD57060SisacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57060Sboaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060S	文件：288.66 Kbytes Page：5 Pages	HFto2000MHzClassABCommonSource-PowerSO-10RF HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to	ETC1List of Unclassifed Manufacturers 未分类制造商
PD57060S-E	文件：488.78 Kbytes Page：21 Pages	RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060S-E	文件：520.53 Kbytes Page：21 Pages	RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060STR-E	文件：488.78 Kbytes Page：21 Pages	RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060STR-E	文件：520.53 Kbytes Page：21 Pages	RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060TR-E	文件：488.78 Kbytes Page：21 Pages	RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
PD57060TR-E	文件：520.53 Kbytes Page：21 Pages	RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain,	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
SD57060	文件：288.66 Kbytes Page：5 Pages	HFto2000MHzClassABCommonSource-PowerSO-10RF HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to	ETC1List of Unclassifed Manufacturers 未分类制造商
SD57060	文件：73.25 Kbytes Page：8 Pages	RFPOWERTRANSISTORSTheLdmoSTFAMILY HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STAP57060	文件：261.44 Kbytes Page：16 Pages	RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=60Wwith14.3dBgain@945MHz/ 28V ■STadvancedPowerSO-10RF-STAP-package Description TheSTAP57060isacommonsourceN-Channel, enhancement-modelateralField-EffectRFpower MOSFET.Itisdesignedfo	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
TSD57060	文件：73.25 Kbytes Page：8 Pages	RFPOWERTRANSISTORSTheLdmoSTFAMILY HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团

产品属性

产品编号：
PD57060-E
制造商：
STMicroelectronics
类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 射频
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
晶体管类型：
LDMOS
频率：
945MHz
增益：
14.3dB
额定电流（安培）：
7A
功率 - 输出：
60W
封装/外壳：
PowerSO-10 裸露底部焊盘
供应商器件封装：
10-PowerSO
描述：
FET RF 65V 945MHZ PWRSO10

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	PD57060-E	ST	22+	SMD	8759	只做原装正品假一赔十!正规渠道订货!	询价
中天科工半导体（深圳）有限公司	PD57060-E	STMicroelectronics	23+	PowerSO-10 裸露底部焊盘	30000	晶体管-分立半导体产品-原装正品	询价
深圳市英瑞尔电子科技有限公司	PD57060-E	ST	22+	SO-10RF	2500	进口原装现货/假一赔十	询价
深圳市艾宇特电子科技有限公司	PD57060-E	ST	21+	SMD	6850	只做原装正品假一赔十!正规渠道订货!	询价
深圳市华鑫创达电子有限公司	PD57060-E	SPANSION	21+	BGA	8000	公司原装现货,欢迎咨询	询价
深圳市特顺芯科技有限公司	PD57060-E	ST	07+/08+	PowerSO-10	615		询价
深圳市粤骏腾电子科技有限公司	PD57060-E	MITSUBI	23+	TO-59	240	价格优势	询价
深圳市百诺芯科技有限公司	PD57060-E	ST	23+	TO-59	8510	原装正品代理渠道价格优势	询价
艾睿国际（香港）有限公司	PD57060-E	ST	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	PD57060-E	STM	1809+	SOP-10	96	就找我吧!--邀您体验愉快问购元件!	询价

更多PD57060-E供应商更新时间2024-4-26 17:10:00

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