RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

文件：488.78 Kbytes 页数：21 Pages

STMICROELECTRONICS

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

文件：520.53 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 945MHZ PWRSO10

STMICROELECTRONICS

意法半导体