RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

文件：362.93 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

RF Power LDMOS transistor

The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linea Excellent thermal stability\nCommon source configuration\nPOUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V\nPlastic package\nESD protection\nIn compliance with the 2002/95/EC european directive;

ST

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 25V 870MHZ

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity a

文件：272.92 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

文件：362.93 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

文件：362.93 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体