RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：493.87 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：289.23 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：289.23 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 页数：5 Pages

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