RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

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意法半导体

45W 28V HF - 1GHz LDMOS晶体管，PSO-10RF塑料封装

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit • Excellent thermal stability \n• Common source configuration \n• POUT = 45 W with 13dB gain @ 945 MHz / 28 V \n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 945MHZ PWRSO-10

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：91.17 Kbytes 页数：8 Pages

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RF POWER TRANSISTORS The LdmoSTFAMILY

DESCRIPTION The SD57045 is a common source N-Channel Enhancement-Modelateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed for high gain and broadband performance operating in common source mode

文件：234.97 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：91.17 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体