PD55003STR-E分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PD55003STR-E属于分立半导体产品的晶体管-FETMOSFET-射频。由意法半导体集团制造生产的PD55003STR-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V

Description

The PD55003-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies of up to 1 GHz. The PD55003 boasts

excellent gain, linearity and reliability thanks to

ST’s latest LDMOS technology mounted in the

first true SMD plastic RF power package, the

PowerSO-10RF.

The PD55003’s superior linearity performance

makes it an ideal solution for car mobile radios.

The PowerSO-10RF plastic package is designed

for high reliability, and is the first JEDECapproved,

high power SMD package from ST. It

has been optimized for RF requirements and

offers excellent RF performance and ease of

assembly.

Mounting recommendations are provided in

application note AN1294, available on