PD55008S-E数据表ic资料批发采购意法半导体-114ic电子网

首页 >PD55008S-E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
PD55008S-E	文件：414.12 Kbytes Page：28 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g 文件：414.12 Kbytes 页数：28 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD55008S-E	文件：501.36 Kbytes Page：25 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：501.36 Kbytes 页数：25 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD55008S-E	文件：300 bytes Page：1 Pages	射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.	ST 意法半导体	ST
PD55008S-E	文件：100 bytes Page：1 Pages	Package：PowerSO-10 裸露底部焊盘；包装：托盘类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：FET RF 40V 500MHZ PWRSO10	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多PD55008S-E供应商更新时间2026-1-17 10:31:00