HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：181.89 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

Features • Common source configuration • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V • New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial

文件：332.66 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit • Excellent thermal stability \n• Common source configuration \n• POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V \n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半导体