丝印：G5；Package：SOT1061D；50 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to

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丝印：G5；Package：SOT1061D；50 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to

文件：283.74 Kbytes 页数：14 Pages

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50 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

文件：49.74 Kbytes 页数：7 Pages

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丝印：3H；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power mana

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丝印：FH；Package：TO-236AB；50 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

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丝印：FH；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high

文件：264.6 Kbytes 页数：13 Pages

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丝印：1M；Package：SOT89；50 V, 2 A NPN low VCEsat (BISS) transistor

FEATURES · SOT89 (SC-62) package · Low collector-emitter saturation voltage VCEsat · High collector current capability: IC and ICM · Higher efficiency leading to less heat generation · Reduced printed-circuit board requirements. APPLICATIONS · Power management – DC/DC converters – Suppl

文件：83.32 Kbytes 页数：9 Pages

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50 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4250X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

文件：47.07 Kbytes 页数：8 Pages

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PNP low VCEsat (BISS) transistor 50 V, 2 A

文件：128.62 Kbytes 页数：7 Pages

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Low VCEsat (BISS) transistors

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