丝印：G5；Package：SOT1061D；50 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to

文件：283.74 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 2 A PNP low VCEsat transistor

PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package.

Nexperia

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

文件：49.74 Kbytes 页数：7 Pages

PHI

飞利浦

50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power mana

文件：329.89 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

文件：248.7 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司