PBSS5250TH

Marking：FH；Package：TO-236AB；50 V, 2 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highcollector

PBSS5250TH-Q

Marking：FH；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athigh

PBSS5250THR

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5250TH/SOT23/TO-236AB

Nexperia USA Inc.

PBSS5250X

50V,2APNPlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT89plasticpackage. NPNcomplement:PBSS4250X. FEATURES •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprin

PBSS5250X

LowVCEsat(BISS)transistors

PBSS5250X

50V,2ANPNlowVCEsat(BISS)transistor

FEATURES ·SOT89(SC-62)package ·Lowcollector-emittersaturationvoltageVCEsat ·Highcollectorcurrentcapability:ICandICM ·Higherefficiencyleadingtolessheatgeneration ·Reducedprinted-circuitboardrequirements. APPLICATIONS ·Powermanagement –DC/DCconverters –Suppl

PDCS5250V

DC/DCPOWERMODULES2AMPADJUSTABLE

PJBZ5250Q

500mWZENERSINQFN1.2x1.5mm짼

PJLEDS5250

RECTIFICATIONFUNCTIONINFLYBACKCONVERTERFORLEDPOWER

PMBZ5250B

Voltageregulatordiodes

DESCRIPTION Low-powervoltageregulatordiodesinsmallSOT23plasticSMDpackages. Theseriesconsistsof32typeswithnominalworkingvoltagesfrom3.3to75V. FEATURES •Totalpowerdissipation:max.250mW •Toleranceseries:±5 •Workingvoltagerange:nom.3.3to75V •Non-repetiti