丝印：FH；Package：TO-236AB；50 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

文件：248.7 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：FH；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high

文件：264.6 Kbytes 页数：13 Pages

NEXPERIA

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat genereation\n• High temperature applications up to 175 °C\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat genereation\n• High temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended fo;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5250TH/SOT23/TO-236AB

NEXPERIA

安世