PBSS5250TH-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS5250TH-Q
功能描述	50 V, 2 A PNP low VCEsat (BISS) transistor
丝印标识	FH
封装外壳	SOT23
文件大小	264.6 Kbytes
页面数量	13 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-14 22:58:00
人工找货	PBSS5250TH-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability: IC and ICM

• High collector current gain (hFE) at high IC

• Higher efficiency leading to less heat genereation

• High temperature applications up to 175 °C

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Power management

• DC-to-DC conversion

• Supply line switches

• Battery charger switches

• Peripheral drivers

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver