PBSS5250PAS中文资料安世数据手册PDF规格书

厂商型号	PBSS5250PAS
功能描述	50 V, 2 A PNP low VCEsat transistor
丝印标识	G5
封装外壳	SOT1061D
文件大小	282.53 Kbytes
页面数量	14 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-8 23:00:00
人工找货	PBSS5250PAS价格和库存，欢迎联系客服免费人工找货

1. General description

PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability: IC and ICM

• Higher efficiency leading to less heat generation

• Reduced printed-circuit board requirements

• Leadless small SMD plastic package with solderable side pads

• Exposed heat sink for excellent thermal and electrical conductivity

• Suitable for Automatic Optical Inspection (AOI) of solder joint

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)