PBSS5250T

50 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPBISStransistorinaSOT23plasticpackageofferingultralowVCEsatandRCEsatparameters. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuit

PBSS5250T

Marking：3H；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements •CosteffectivealternativetoMOSFETsinspecificapplications. APPLICATIONS •Powermana

PBSS5250TH

Marking：FH；Package：TO-236AB；50 V, 2 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highcollector

PBSS5250TH-Q

Marking：FH；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athigh

PBSS5250T_15

PNP low VCEsat (BISS) transistor 50 V, 2 A

PBSS5250T,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TO236AB

Nexperia USA Inc.

PBSS5250THR

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5250TH/SOT23/TO-236AB

Nexperia USA Inc.