50 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

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PHI

飞利浦

丝印：3H；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power mana

文件：329.89 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：FH；Package：TO-236AB；50 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

文件：248.7 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：FH；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high

文件：264.6 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP low VCEsat (BISS) transistor 50 V, 2 A

文件：128.62 Kbytes 页数：7 Pages

PHI

飞利浦

50 V; 2 A PNP low VCEsat (BISS) transistor

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• Higher efficiency leading to less heat generation\n• Reduced printed-circuit board requirements\n• Cost effective alternative to MOSFETs in specific applications.\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat genereation\n• High temperature applications up to 175 °C\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat genereation\n• High temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended fo;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5250TH/SOT23/TO-236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司