PNP low VCEsat (BISS) transistor 50 V, 2 A

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PHI

飞利浦

50 V, 2 A PNP low VCEsat transistor

PNP low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package.

Nexperia

安世

50 V; 2 A PNP low VCEsat (BISS) transistor

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• Higher efficiency leading to less heat generation\n• Reduced printed-circuit board requirements\n• Cost effective alternative to MOSFETs in specific applications.\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat genereation\n• High temperature applications up to 175 °C\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS5250TH/SOT23/TO-236AB

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A SOT89

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A SOT89

Nexperia USA Inc.