BC857

Marking：3H；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

BC857W

Marking：3H；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V).

BC857W-Q

Marking：3H；Package：SOT323；65 V, 100 mA PNP general-purpose transistors

1.Generaldescription PNPgeneral-purposetransistorsinaverysmallSOT323(SC-70),Surface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEDEC NPNcomplement BC856W-QBC846W-Q BC856AW-QBC846AW-Q BC856BW-QBC846BW-Q BC857W-QBC847W-Q BC

BZX884S-B51

Marking：3H；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B51-Q

Marking：3H；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

MM3Z75

Marking：3H；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PBSS5250T

Marking：3H；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements •CosteffectivealternativetoMOSFETsinspecificapplications. APPLICATIONS •Powermana

PESD12VL1BSL

Marking：3H；Package：SOD882-S1；ESD protection device

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodeinaDFN1006-2(SOD882-S1) leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits •B

PMN25ENE

Marking：3H；Package：SOT457；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Logic-levelcompatible •Veryfastswitching •Electr

RT6585BGQW

Marking：3H；Package：WQFN-20L；Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs

Features SupportConnectedStandbyModeforUltrabook CCRCOTControlwith100nsLoadStepResponse PWMMaximumDutyRatio>98 5Vto25VInputVoltageRange DualAdjustableOutput: CH1:2Vto5.5V CH2:2Vto4V 5V/3.3VLDOswith100mAOutputCurrent 1Accuracyon3.3VLDOOutput O