RB530XN

Marking：3H；Package：SOT-363；Schottky Barrier Diode

RB530XN

Marking：3H；Package：SOT-363；Schottky barrier diode

TDZ4V7J

Marking：3H；Package：SC-90；Single Zener diodes

TL431BQPK

Marking：3H；Package：SOT-89；Precision Programmable Reference

TL431BQPKG3

Marking：3H；Package：SOT-89；Precision Programmable Reference

BC857

Marking：3H-；Package：SOT-23；45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC857

Marking：3H-；Package：SOT-23；PNP general purpose transistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC857W

Marking：3H-；Package：SOT-323；PNP general purpose transistors

DESCRIPTION PNPtransistorinaplasticSOT323package. NPNcomplements:BC846WandBC847W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.80) •S-minipackage. APPLICATIONS •Generalpurposeswitchingandamplification.

BC857W

Marking：3H-；Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

ESD851DYFR

Marking：3H6F；Package：SOT；ESD851 36V Bidirectional ESD Protection Diode in SOD-323

1Features •IEC61000-4-2ESDprotection: –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –6.5A(8/20μs) –Clampingvoltage:71Vat6.5A(8/20μs) •IOCapacitance:4.3pF(typical) •DCbreakdownvoltage:37.8V(minimum) •Ultralowleakagecurrent: