丝印：3H；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideally suited for automatic insertion For Switching and AF Amplifier Applications

文件：344.44 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：3H；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 65 V).

文件：236.73 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：3H；Package：SOT323；65 V, 100 mA PNP general-purpose transistors

1. General description PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEDEC NPN complement BC856W-Q BC846W-Q BC856AW-Q BC846AW-Q BC856BW-Q BC846BW-Q BC857W-Q BC847W-Q BC

文件：229.32 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：3H；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：3H；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：3H；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：3H；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power mana

文件：329.89 Kbytes 页数：8 Pages

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丝印：3H；Package：SOD882-S1；ESD protection device

1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882-S1) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • B

文件：225.74 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：3H；Package：SOT457；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • Electr

文件：264.74 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：3H；Package：WQFN-20L；Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs

Features Support Connected Standby Mode for Ultrabook CCRCOT Control with 100ns Load Step Response PWM Maximum Duty Ratio > 98 5V to 25V Input Voltage Range Dual Adjustable Output :  CH1 : 2V to 5.5V  CH2 : 2V to 4V 5V/3.3V LDOs with 100mA Output Current 1 Accuracy on 3.3V LDO Output O

文件：273.24 Kbytes 页数：22 Pages

RICHTEK

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