PBSS5160DS

60 V, 1 A PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PBSS5160DS

丝印：A5；Package：SC-74；60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS5160K

60 V, 1 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT346(SC-59A)SurfaceMountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160K. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Highco

PBSS5160PAP

丝印：2L；Package：DFN2020-6；60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1.Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.NPN/NPNcomplement:PBSS4160PAN. 2.Featuresandbenefits •Verylowcollec

PBSS5160PAP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n;

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN.\n

PBSS5160PAP-Q

60 V, 1 A PNP/PNP low VCEsat double transistor

Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •HighcollectorcurrentgainhFEathighIC •ReducedPrinted-CircuitBoard(PCB)requirements •Highenergyefficiencyduetolessheatgeneration •Qualifiedaccordi

PBSS5160PAPS-Q

60 V, 1 A PNP/PNP low VCEsat double transistor

Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •HighcollectorcurrentgainhFEathighIC •ReducedPrinted-CircuitBoard(PCB)requirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •

PBSS5160QA

丝印：101010；Package：DFN1010D-3；60 V, 1 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4160QA. 2.Featuresandbenefits •Verylowcollector-

PBSS5160QA

60 V, 1 A PNP low VCEsat (BISS) transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN complement: PBSS4160QA.\n

PBSS5160T

60 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4160T. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highefficiency,reducesheatgeneration •Reducesprinted-circuitboardarearequired •