60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

文件：143.46 Kbytes 页数：14 Pages

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飞利浦

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and

文件：141 Kbytes 页数：14 Pages

恩XP

丝印：A5；Package：SC-74；60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：263.34 Kbytes 页数：15 Pages

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60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hi

文件：124.85 Kbytes 页数：14 Pages

恩XP

60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High co

文件：125.18 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：2L；Package：DFN2020-6；60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. 2. Features and benefits • Very low collec

文件：751.74 Kbytes 页数：17 Pages

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安世

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi

文件：311.74 Kbytes 页数：17 Pages

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安世

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity •

文件：311.67 Kbytes 页数：17 Pages

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丝印：101010；Package：DFN1010D-3；60 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits • Very low collector-

文件：743.81 Kbytes 页数：17 Pages

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丝印：U6；Package：SOT23；60 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency due to less heat generation * Reduces Printed-Circuit Board (PCB) area required * Cost-effective replacement for medium power transistors BCP52 and BCX52

文件：696.66 Kbytes 页数：11 Pages

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