丝印：HU6；Package：SOT-23；TRANSISTOR(PNP)

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting LCD back-lighting Supply line switching circuits.

文件：196.31 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

60 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

文件：109.09 Kbytes 页数：10 Pages

PHI

飞利浦

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：698.91 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM

文件：133.73 Kbytes 页数：14 Pages

恩XP

丝印：53；Package：SOT323；60 V, 1 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage VCEsat n High collector current capability I

文件：247.33 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：51；Package：SOT666；60 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation * Reduces printed-circuit board area required * Cost effective replacement for medium power transistors BCP52 and BCX52

文件：267.59 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency leading to less heat generati

文件：153.79 Kbytes 页数：14 Pages

恩XP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：148.63 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：276.04 Kbytes 页数：17 Pages

恩XP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：763.04 Kbytes 页数：19 Pages

NEXPERIA

安世