丝印：2L；Package：DFN2020-6；60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. 2. Features and benefits • Very low collec

文件：751.74 Kbytes 页数：17 Pages

NEXPERIA

安世

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：276.04 Kbytes 页数：17 Pages

恩XP

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi

文件：311.74 Kbytes 页数：17 Pages

NEXPERIA

安世

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity •

文件：311.67 Kbytes 页数：17 Pages

NEXPERIA

安世

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：763.04 Kbytes 页数：19 Pages

NEXPERIA

安世

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. • Very low collector-emitter saturation voltage VCEsat\n• High collector current gain hFE at high IC\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Suitable for Automatic Optical Inspection (AOI) of solder joints\n• AEC-Q101 qualified;

Nexperia

安世

60 V, 1 A PNP/PNP low VCEsat double transistor

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Nexperia

安世