PBSS5160PAP-Q资料datasheet下载行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
PBSS5160PAP-Q	文件：311.74 Kbytes Page：17 Pages	60 V, 1 A PNP/PNP low VCEsat double transistor Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi 文件：311.74 Kbytes 页数：17 Pages	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PBSS5160PAP-Q	文件：300 bytes Page：1 Pages	60 V, 1 A PNP/PNP low VCEsat double transistor	Nexperia 安世	Nexperia
PBSS5160PAPS	文件：763.04 Kbytes Page：19 Pages	60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 文件：763.04 Kbytes 页数：19 Pages	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PBSS5160PAPS-Q	文件：311.67 Kbytes Page：17 Pages	60 V, 1 A PNP/PNP low VCEsat double transistor Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity • 文件：311.67 Kbytes 页数：17 Pages	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA

更多PBSS5160PAP-Q供应商更新时间2025-10-11 17:00:00