60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM

文件：133.73 Kbytes 页数：14 Pages

恩XP

丝印：53；Package：SOT323；60 V, 1 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage VCEsat n High collector current capability I

文件：247.33 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 1 A PNP low VCEsat (BISS) transistor

文件：134.62 Kbytes 页数：14 Pages

PHI

PHI

60 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4160U. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

Nexperia

安世

60 V, 1 A PNP low VCEsat transistor

PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accordi;

Nexperia

安世

Package：SC-70，SOT-323；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.7A SOT323

Nexperia USA Inc.