BAS16VV

Marking：53；Package：SOT666；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaultrasmallandflatleadSOT666Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetiti

BAS16VV

Marking：53；Package：SOT666；High-speed switching diodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

BGSX33M5U16

Marking：53；Package：PG-ULGA-16-5；3P3T antenna cross switch with MIPI RFFE control interface

Features Highlinearityupto38dBmpeakpower Fastswitchingtime(max2µs)for5GSRSapplications Lowinsertionlossandhighporttoportisolationupto7.125GHz LowpowerconsumptionallowstouseMIPIRFFEsupply MIPIRFFE2.1controlinterface Sowareandhardwareprog

BZX84-A3V3

Marking：53；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

DTA143Y

Marking：53；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

LBAV170LT1G

Marking：53；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LBAV170LT3G

Marking：53；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LBAV199LT1G

Marking：53；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LBAV199LT3G

Marking：53；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

MT6L76FS

Marking：53；Package：fS6；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf