BAS16VV

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

BAS16VV

Triple high-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

BAS16VV

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

BAS16VV

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAlloyLeadframeforHighPower Dissipation T

BAS16VV

Marking：53；Package：SOT666；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaultrasmallandflatleadSOT666Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetiti

BAS16VV

Marking：53；Package：SOT666；High-speed switching diodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

BAS16VV

High-speed switching diodes

BAS16VV

High-speed switching diodes

BAS16VV

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages

BAS16VV

Triple high-speed switching diodes