MTN5003T

Marking：53；Package：SOT523；SOT-523 Plastic-Encapsulate MOSFETS

FEATURE eHighdensitycelldesignforextremelylowRps(on) eRuggedandRelaible APPLICATION oDirectLogic-LevelInterface:TTL/ICMOS eDrivers:Relays,Solenoids,Lamps,Hammers;Display, Memories,Transistors,etc. eBatteryOperatedSystems eSolid-StateRelays oESDprotectionforh

PBSS5160U

Marking：53；Package：SOT323；60 V, 1 A PNP low VCEsat (BISS) transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaverysmall SOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160U. 1.2Features nLowcollector-emittersaturationvoltageVCEsat nHighcollectorcurrentcapabilityI

PBSS5350D

Marking：53；Package：SC-74；50 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcurrentcapability •Highefficiencyduetolessheatgenera

PBSS5350D-Q

Marking：53；Package：SC-74；50 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcurrentcapability •Highefficiencyduetolessheatgene

PDTC143XU

Marking：53；Package：SC-70；NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTC144TK

Marking：53；Package：SOT346；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC144TK

Marking：53；Package：SOT346；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION NPNresistor-equippedtransistor(see“Simplif

SN74LVC2G53DCU3

Marking：53；Package：VSSOP；SN74LVC2G53 Single-Pole Double-Throw (SPDT) Analog Switch 2:1 Analog Multiplexer/Demultiplexer

1Features 1•AvailableintheTexasInstruments NanoFree™Package •1.65-Vto5.5-VVCCOperation •HighOn-OffOutputVoltageRatio •HighDegreeofLinearity •HighSpeed,Typically0.5ns(VCC=3V, CL=50pF) •LowON-StateResistance,Typically6.5Ω (VCC=4.5V) •Latch-UpPerf

SP000278512

Marking：53；Package：PG-SSO-2-1；Differential Hall Effect Transmission Speed Sensors

1.1TargetApplication ThedifferentialHallEffectsensorTLE4953isdesignedtoprovideinformationaboutrotationalspeedanddirection ofrotationtomoderntransmissionandABSsystems.Theoutputhasbeendesignedasatwowirecurrent interfacebasedonaPulseWidthModulationprinciple

TLE4953

Marking：53；Package：PG-SSO-2-1；Differential Hall Effect Transmission Speed Sensors

1.1TargetApplication ThedifferentialHallEffectsensorTLE4953isdesignedtoprovideinformationaboutrotationalspeedanddirection ofrotationtomoderntransmissionandABSsystems.Theoutputhasbeendesignedasatwowirecurrent interfacebasedonaPulseWidthModulationprinciple