60 V, 1 A PNP low VCEsat (BISS) transistor

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Low VCEsat (BISS) transistors

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60 V, 1 A PNP low VCEsat (BISS) transistor

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60 V, 1 A PNP low VCEsat (BISS) transistor

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PHI

PHI

60 V, 1 A PNP low VCEsat (BISS) transistor

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PHI

PHI

60 V, 1 A PNP/PNP low VCEsat transistor

PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4160DS-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accordi;

Nexperia

安世

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

60 V, 1 A PNP low VCEsat (BISS) transistor

恩XP