60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High co

文件：125.18 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hi

文件：124.85 Kbytes 页数：14 Pages

恩XP

60 V, 1 A PNP low VCEsat (BISS) transistor

恩XP

恩智浦

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. 2. Features and benefits • Very low collec

文件：751.74 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi

文件：311.74 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司