51

型号：3.0SMC51；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

51

型号：BAV170；Package：SOT-23；Low Leakage Current

FEATURES ●LowLeakageCurrent ●HighSwitchingSpeed APPLICATION ●Low-leakageCurrentApplications inSurfaceMountedCircuits

51

型号：BZX84-A2V7；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

51

型号：CMZ51A；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

51

型号：GLZ51；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

51

型号：PBSS5160V；Package：SOT666；60 V, 1 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiencyleadingtolessheatgeneration *Reducesprinted-circuitboardarearequired *CosteffectivereplacementformediumpowertransistorsBCP52andBCX52

51

型号：PDTC124XK；Package：SC-59A；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

51

型号：PDTC124XU；Package：SC-70；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

51

型号：PDTC124XU；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA124XU 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickand

51

型号：RB751S40-AU_R1_000A1；Package：SOD-523；SCHOTTKY BARRIER RECTIFIER

Features Lowforwardvoltagedrop Dealforautomatedplacement Lowpowerloss,highefficiency Highsurgecurrentcapability LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard AEC-Q101qualified