60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency leading to less heat generati

文件：153.79 Kbytes 页数：14 Pages

恩XP

丝印：51；Package：SOT666；60 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation * Reduces printed-circuit board area required * Cost effective replacement for medium power transistors BCP52 and BCX52

文件：267.59 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 1 A PNP low VCEsat (BISS) transistor

文件：153.79 Kbytes 页数：14 Pages

PHI

PHI

60 V, 1 A PNP low V_CEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.\n NPN complement: PBSS4160V.\n • Low collector-emitter saturation voltage VCEsat\n• High efficiency leading to less heat generation\n• Cost effective replacement for medium power transistors BCP52 and BCX52\n• AEC-Q101 qualified\n;

Nexperia

安世

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.9A SOT666

Nexperia USA Inc.