PBSS4160DPN

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire

PBSS4160DPN

丝印：B4；Package：SC-74；60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4160DPN-Q

60 V, 1 A NPN/PNP low VCEsat transistor;

NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n

PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualified\n;

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS.\n

PBSS4160DS

丝印：B8；Package：SOT-26；60 V 1 A NPN/NPN low VCEsat (BISS) transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PBSS4160DS

丝印：B8；Package：SC-74；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4160DS-Q

60 V, 1 A NPN/NPN low VCEsat transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS-Q\n

PBSS4160PAN

丝印：2K；Package：DFN2020-6；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollec

PBSS4160PANP

丝印：2M；Package：DFN2020-6；60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollect

PBSS4160PANPS

丝印：3G；Package：DFN2020D-6；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features