60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. 2.

文件：331.97 Kbytes 页数：23 Pages

恩XP

丝印：110010；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits • Very low collector-

文件：744.15 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：11；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：296.09 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：U5；Package：SOT23；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces print

文件：852.82 Kbytes 页数：12 Pages

NEXPERIA

安世

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：466.31 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

60 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

文件：111.1 Kbytes 页数：10 Pages

PHI

飞利浦

丝印：U5；Package：SOT23；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces pri

文件：257.81 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：52；Package：SC-70；60 V, 1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：324.89 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：52*；Package：SOT-323；60 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160U. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High col

文件：211.39 Kbytes 页数：14 Pages

恩XP

丝印：41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：166.98 Kbytes 页数：14 Pages

恩XP