60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

文件：573.33 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：52；Package：SC-70；60 V, 1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：324.89 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：52*；Package：SOT-323；60 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160U. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High col

文件：211.39 Kbytes 页数：14 Pages

恩XP

丝印：41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：166.98 Kbytes 页数：14 Pages

恩XP

丝印：41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：101.42 Kbytes 页数：14 Pages

PHI

PHI

丝印：41；Package：SOT666；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

文件：251.89 Kbytes 页数：12 Pages

NEXPERIA

安世

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

文件：267.84 Kbytes 页数：18 Pages

PHI

PHI

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

文件：216.47 Kbytes 页数：14 Pages

PHI

PHI

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

文件：276.45 Kbytes 页数：17 Pages

PHI

PHI

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

文件：368.23 Kbytes 页数：21 Pages

PHI

PHI